Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers

被引：52

作者：

Gokhale, MR ^{[1
]}

Studenkov, PV ^{[1
]}

Wei, J ^{[1
]}

Forrest, SR ^{[1
]}

机构：

[1] Princeton Univ, Ctr Photon & Optoelectron Mat, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 02期

关键词：

GSMBE; InGaAsN; mixed nitrides; quantum-well lasers; semiconductor lasers;

D O I：

10.1109/68.823493

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate high-performance Al-free InGaAsN-GaAs-InGaP-based long-wavelength quantum-well (QW) lasers grown on GaAs substrates by gas-source molecular beam epitaxy using a RF plasma nitrogen source. Continuous wave (CW) operation of InGaAsN-GaAs QW losers is demonstrated at lambda = 1.3 mu m at a threshold current density of only J(TH) = 1.32 kA/cm(2). These narrow ridge (W = 8.5 mu m) lasers also exhibit an internal loss of only 3.1 cm(-1) and an internal efficiency of 60%, Also, a characteristic temperature of T-0 = 150 K from 10 degrees C to 60 degrees C was measured, representing a significant improvement over conventional lambda = 1.3 mu m InGaAsP-InP lasers, Under pulsed operation, a record high maximum operating temperature of 125 degrees C and output powers greater than 300 mW (pulsed) and 120 mW (CW) were also achieved.

引用

页码：131 / 133

页数：3

共 13 条

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