Improved temperature dependence of 1.3 μm AlGalnAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure

被引：9

作者：

Sweeney, SJ ^{[1
]}

Higashi, T

Adams, AR

Uchida, T

Fujii, T

机构：

[1] Univ Surrey, Dept Phys, Sch Phys Sci, Guildford GU2 5XH, Surrey, England

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 22期

关键词：

D O I：

10.1049/el:19981461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold current I-th of 1.3 mu M AlGaInAs devices increases by similar to 8% over a 1 GPa pressure range contrasting with decreases of 10 15% in 1.3 mu m InGaAsP devices. This can be explained with 50% nonradiative recombination in InGaAsP and only similar to 20% in AlGaInAs devices, resulting in a much improved temperature dependence of I-th.

引用

页码：2130 / 2132

页数：3

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