ENHANCED CHARACTERISTICS OF INGAASP BURIED QUATERNARY LASERS WITH PRESSURES UP TO 1.5 GPA

被引：8

作者：

PATEL, D ^{[1
]}

MENONI, CS ^{[1
]}

TEMKIN, H ^{[1
]}

LOGAN, RA ^{[1
]}

COBLENTZ, D ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 20期

关键词：

D O I：

10.1063/1.109318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pressure dependent measurements of the threshold current, differential quantum efficiency, and lasing wavelength of a approximately 1.3 mum bulk InGaAsP semiconductor laser performed in a diamond anvil cell up to 1.5 GPa are reported. Results show a 40% decrease in the threshold current and a simultaneous enhancement in the differential quantum efficiency of approximately 350%. Large wavelength tunability of 140 nm is observed in this pressure range at room temperature. Calculations indicate that a reduction of the Auger recombination rate is likely to be the dominant loss mechanism responsible for the observed changes in the laser threshold current in this pressure range.

引用

页码：2459 / 2461

页数：3

共 13 条

[1] PRESSURE-DEPENDENCE OF THE HOLE MOBILITY IN GAAS, INP AND (GAIN)(ASP)/INP [J].