Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio

被引：38

作者：

Takeuchi, T

Chang, YL

Tandon, A

Bour, D

Corzine, S

Twist, R

Tan, M

Luan, HC

机构：

[1] Agilent Technol Labs, Palo Alto, CA 94304 USA

[2] Agilent Technol, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 14期

关键词：

D O I：

10.1063/1.1467697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have achieved 160 A/cm(2) threshold current density of a 1.21 mum InGaAs/GaAs quantum well (QW) laser grown under a very low As/III ratio. We investigated the As/III ratio dependence on the optical quality of InGaAs QWs grown with arsine and tertiarybutylarsine (TBA). We found that TBA allows us to grow high quality InGaAs QWs under a very low As/III ratio (similar to3), while a higher As/III ratio (similar to10) with arsine is necessary to obtain the similar quality QWs. This high quality InGaAs QW grown under the low As/III ratio leads to the realization of high quality InGaAsN QW which should be grown under a low As/III ratio and a high N/V ratio. (C) 2002 American Institute of Physics.

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页码：2445 / 2447

页数：3

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