GaInNAs long-wavelength lasers: progress and challenges

被引：187

作者：

Harris, JS ^{[1
]}

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2002年 / 17卷 / 08期

关键词：

D O I：

10.1088/0268-1242/17/8/317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Research to realize long-wavelength, GaInNAs quantum well lasers has been intense in the past three years. The results have been very promising considering the relative immaturity and challenges of this new materials system. This paper reviews both the materials challenges and progress in growth of the metastable GaInNAs alloys required to reach the 1.3-1.55 mum communication wavelengths and the challenges and progress in device design for both vertical-cavity surface-emitting lasers and higher power edge-emitting lasers.

引用

页码：880 / 891

页数：12

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