GaInAsN/GaAs laser diodes operating at 1.52μm

被引:134
作者
Fischer, M [1 ]
Reinhardt, M
Forchel, A
机构
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Nanoplus GmbH, Nanosyst & Technol, D-97074 Wurzburg, Germany
关键词
D O I
10.1049/el:20000870
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 mu m range based on GaAs.
引用
收藏
页码:1208 / 1209
页数:2
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