GaInAsN/GaAs laser diodes operating at 1.52μm

被引：134

作者：

Fischer, M ^{[1
]}

Reinhardt, M

Forchel, A

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Nanoplus GmbH, Nanosyst & Technol, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 14期

关键词：

D O I：

10.1049/el:20000870

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 mu m range based on GaAs.

引用

收藏

页码：1208 / 1209

页数：2

相关论文

共 8 条

[1] High power CW operation of InGaAsN lasers at 1.3μm [J].

Egorov, AY ;

Bernklau, D ;

Livshits, D ;

Ustinov, V ;

Alferov, ZI ;

Riechert, H .

ELECTRONICS LETTERS, 1999, 35 (19) :1643-1644

[2] Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm [J].

Höhnsdorf, F ;

Koch, J ;

Leu, S ;

Stolz, W ;

Borchert, B ;

Druminski, M .

ELECTRONICS LETTERS, 1999, 35 (07) :571-572

[3] GaInNAs: A novel material for long-wavelength semiconductor lasers [J].

Kondow, M ;

Kitatani, T ;

Nakatsuka, S ;

Larson, MC ;

Nakahara, K ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :719-730

[4] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[5] 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers [J].

Nakahara, K ;

Kondow, M ;

Kitatani, T ;

Larson, MC ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) :487-488

[6] 1.3-μm GaInNAs-AlGaAs distributed feedback lasers [J].

Reinhardt, M ;

Fischer, M ;

Kamp, M ;

Hofmann, J ;

Forchel, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (03) :239-241

[7] High-temperature characteristic in 1.3-μm-range highly strained GaInNAs ridge stripe lasers crown by metal-organic chemical vapor deposition [J].

Sato, S ;

Satoh, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) :1560-1562

[8] 1.3 μm continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition [J].

Sato, S ;

Satoh, S .

ELECTRONICS LETTERS, 1999, 35 (15) :1251-1252