Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-μm range

被引：38

作者：

Fischer, MO

Reinhardt, M

Forchel, A

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Nanoplus Naosyst & Technol GmbH, D-97074 Wurzburg, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2001年 / 7卷 / 02期

关键词：

laser diodes (LDs); optical fiber communication; quantum-well (QW) lasers; semiconductor lasers; semiconductor materials; telecommunication;

D O I：

10.1109/2944.954123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInAsN-GaAs double quantum-well (DQW) laser structures emitting in the 1.5-mum range were grown by solid source molecular beam epitaxy using a radio frequency plasma source for nitrogen activation. Lasing operation in the 1.5-mum wavelength region has been realized for fabricated ridge waveguide laser diodes (LDs) under pulsed condition up to record high temperatures of 80 degreesC resulting in an emission wavelength of 1540 nm. This is the highest emission wavelength for laser diode operation based, on GaAs. In addition, to investigate the optical properties of the active region, photoluminescence studies of underlying GaInAsN-GaAs QW structures emitting at wavelengths up to 1.55 mum are presented.

引用

页码：149 / 151

页数：3

共 8 条

[1] High power CW operation of InGaAsN lasers at 1.3μm [J].