Growth of high quality InGaAsN heterostructures and their laser application

Focus of this work is the optimization of growth to achieve high quality laser material for emission at 1.3 mum and beyond. GaAs/CaAsN/InCaAsN heterostructures were grown by solid source molecular beam epitaxy. To achieve optimum crystal quality of InGaAsN heterostructures, growth was followed by a high temperature treatment at about 700 degreesC, The high optical quality of our annealed material is attested by large exciton recombination lifetimes (more than 2 ns). Consequently, a decrease of single quantum well transparency current density down to 100 A/cm(2) is found and SWQ lasers with threshold current densities as low as 350A/cm(2) have been made. This represents clearly the lowest laser thresholds reported so far for emission around 1.3 mum from the InGaAsN material system. (C) 2001 Published by Elsevier Science B.V.