High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes

被引：7

作者：

Caliman, A ^{[1
]}

Ramdane, A ^{[1
]}

Meichenin, D ^{[1
]}

Manin, L ^{[1
]}

Sermage, B ^{[1
]}

Ungaro, G ^{[1
]}

Travers, L ^{[1
]}

Harmand, JC ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 14期

关键词：

D O I：

10.1049/el:20020412

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Very low threshold (9 mA) singlemode ridge waveguide molecular beam epitaxy-grown GalnNAs/GaNAs/GaAs laser diodes emitting at 1.22 mum are reported. A slope efficiency of 0.3 W/A per facet is demonstrated. Optical gain and carrier lifetime measurements are also presented.

引用

页码：710 / 712

页数：3

共 6 条

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