Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

被引：10

作者：

Yong, JCL ^{[1
]}

Rorison, JM ^{[1
]}

White, IH ^{[1
]}

机构：

[1] Univ Bristol, Ctr Commun Res, Bristol BS8 1TR, Avon, England

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.1390482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 mum applications. (C) 2001 American Institute of Physics.

引用

页码：1085 / 1087

页数：3

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