Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions

被引：20

作者：

Kim, CK ^{[1
]}

Miyamoto, T

Lee, YH

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 3731, South Korea

[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 11期

关键词：

GaInNAs; optical gains; quantum wells; semiconductor lasers; optical fiber communications;

D O I：

10.1143/JJAP.37.5994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influences of In and N compositions on the optical gain characteristics of a GaInNAs-GaAs single quantum well are studied theoretically for the first time. When compared with GaInAs, GaInNAs shows a higher optical gain and a longer emission wavelength, under the condition of identical strain. For a given operating wavelength, the higher-In GaInNAs quantum well exhibits a larger optical gain and a smaller carrier leakage than the higher-N GaInNAs quantum well. For example, more than a two-fold improvement in threshold current is expected from the higher-In Ga0.6In0.4N0.01As0.99 quantum well laser than the higher-N Ga0.75In0.25N0.02As0.98 quantum well laser operating at 1.3 mu m.

引用

页码：5994 / 5996

页数：3

共 13 条

[1] THEORY OF OPTICAL GAIN IN STRAINED-LAYER QUANTUM-WELLS WITHIN THE 6X6 LUTTINGER-KOHN MODEL [J].

AHN, D ;

YOON, SJ ;

CHUANG, SL ;

CHANG, CS .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2489-2497

[2] 1.3μm InAsP/InAlGaAs MQW lasers for high-temperature operation [J].

Anan, T ;

Yamada, M ;

Tokutome, K ;

Sugou, S .

ELECTRONICS LETTERS, 1997, 33 (12) :1048-1049

[3] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS [J].

BABIC, DI ;

STREUBLE, K ;

MIRIN, RP ;

MARGALIT, NM ;

BOWERS, JE ;

HU, EL ;

MARS, DE ;

YANG, L ;

CAREY, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1225-1227

[4] HETEROEPITAXIAL GROWTH OF INP ON A GAAS SUBSTRATE BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY [J].

HORIKAWA, H ;

OGAWA, Y ;

KAWAI, Y ;

SAKUTA, M .

APPLIED PHYSICS LETTERS, 1988, 53 (05) :397-399

[5] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[6] GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes [J].

Larson, MC ;

Kondow, M ;

Kitatani, T ;

Nakahara, K ;

Tamura, K ;

Inoue, H ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (02) :188-190

[7] A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers [J].

Miyamoto, T ;

Takeuchi, K ;

Koyama, F ;

Iga, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (11) :1448-1450

[8] 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers [J].

Nakahara, K ;

Kondow, M ;

Kitatani, T ;

Larson, MC ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) :487-488

[9] ELECTRONIC-STRUCTURE AND PHASE-STABILITY OF GAAS1-XNX ALLOYS [J].

NEUGEBAUER, J ;

VAN DE WALLE, CG .

PHYSICAL REVIEW B, 1995, 51 (16) :10568-10571

[10] Submilliamp 1.3μm vertical-cavity surface-emitting lasers with threshold current density of <500A/cm2 [J].

Qian, Y ;

Zhu, ZH ;

Lo, YH ;

Huffaker, DL ;

Deppe, DG ;

Hou, HQ ;

Hammons, BE ;

Lin, W ;

Tu, YK .

ELECTRONICS LETTERS, 1997, 33 (12) :1052-1054

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