1.3μm InAsP/InAlGaAs MQW lasers for high-temperature operation

被引：14

作者：

Anan, T ^{[1
]}

Yamada, M ^{[1
]}

Tokutome, K ^{[1
]}

Sugou, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Optoelect Res Labs, Ibaraki, Osaka 305, Japan

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 12期

关键词：

semiconductor junction lasers; semiconductor quantum wells;

D O I：

10.1049/el:19970671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAsP/InAlGaAs strained multiquantum-well (MQW) 1.3 mu m lasers with a large conduction band discontinuity are proposed and demonstrated for the first time. An InAsP/InAlGaAs MQW layer with high structural and optical quality was obtained by gas-source molecular beam epitaxy growth combined with postgrowth 650 degrees C rapid thermal annealing. The lasers exhibited a low threshold current density of 1.1kA/cm(2) with an excellent characteristic temperature as high as 116K.

引用

页码：1048 / 1049

页数：2

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