Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28μm

被引：42

作者：

Illek, S ^{[1
]}

Ultsch, A

Borchert, B

Egorov, AY

Riechert, H

机构：

[1] Corp Res Photon, Infineon Technol, Munich, Germany

[2] Univ Appl Sci, Munich, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 08期

关键词：

D O I：

10.1049/el:20000586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The realisation is reported of oxide-confined narrow-stripe lasers incorporating GaInNAs/GaAs multiquantum wells (MQWs) grown by MBE using an RF nitrogen plasma source. Two oxidation layers are employed to achieve proper current confinement and waveguiding. These lasers. emitting close to 1300nm, show record threshold currents as low as 11mA. Slope efficiencies of 0.39W/A and 15mW output power at 120 degrees C under pulsed operation demonstrate the high potential of the GaInNAs active material.

引用

页码：725 / 726

页数：2

共 7 条

[1] 1.29μm GalnNAs multiple quantum-well ridge-waveguide laser diodes with improved performance [J].