1.3μm GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer

被引：9

作者：

Iwai, N ^{[1
]}

Mukaihara, T ^{[1
]}

Itoh, M ^{[1
]}

Yamanaka, N ^{[1
]}

Arakawa, S ^{[1
]}

Shimizu, H ^{[1
]}

Kasukawa, A ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama Res & Dev Labs, Nishi Ku, Yokohama, Kanagawa 2200073, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 14期

关键词：

Aluminum oxide confined inner stripe (ACIS) lasers;

D O I：

10.1049/el:19981006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have fabricated a 1.3 mu m GaInAsP strained-layer QW (Al-oxide confined inner stripe) laser on a p-InP substrate using an AlInAs-oxide layer for the first time. A low threshold current of 6.8mA, a high slope efficiency of 0.55W/A and single lateral mode operation were obtained. Both low threshold and single lateral mode operations indicate that real-index inner stripe structure could be realised using AlInAs-oxide.

引用

页码：1427 / 1428

页数：2

共 6 条

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