Low threshold current 1.3μm InAsP QW ACIS lasers

被引：7

作者：

Iwai, N ^{[1
]}

Mukaihara, T ^{[1
]}

Shimizu, H ^{[1
]}

Yamanaka, N ^{[1
]}

Kumada, K ^{[1
]}

Kasukawa, A ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama Res & Dev Labs, Nishi Ku, Yokohama, Kanagawa 220, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 09期

关键词：

D O I：

10.1049/el:19980627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A very low threshold current of 3.0mA and a stable transverse mode operation of > 30mW were achieved in 1.3 mu m InAsP strained-laver quantum well Al-oxide confined inner stripe (ACIS) lasers. Strain-compensated AlAs/InP/AlInAs super-lattice layers. grown on InP substrate using gas source-MBE, are used for oxidation.

引用

页码：890 / 891

页数：2

共 6 条

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