Laterally oxidised InAlAs-oxide/InP distributed Bragg reflectors

被引：12

作者：

Takenouchi, H

Kagawa, T

Ohiso, Y

Tadokoro, T

Kurokawa, T

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 18期

关键词：

vertical cavity surface emitting lasers; distributed Bragg reflector lasers;

D O I：

10.1049/el:19961097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors propose a new type of distributed Bragg reflector (DBR) using LnAlAs-oxide/InP by lateral oxidation for long wavelength vertical-cavity surface-emitting lasers. When oxidation was performed at 525 degrees C, the InAlAs layer's refractive index changed from 3.2 to 2.5. Results show that the peak reflectivity of a 10 pair DBR is 96.9% at 1.29 mu m.

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页码：1671 / 1673

页数：3

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