7.8 GHz small-signal modulation bandwidth of 1.3μm DQW GaInAsN/GaAs laser diodes

被引：19

作者：

Reinhardt, M

Fischer, M

Kamp, M

Forchel, A

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Nanoplus GMBH, Nanosys & Technol, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 12期

关键词：

D O I：

10.1049/el:20000793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High frequency characterisation of double quantum well GaInAsN laser diodes emitting at 1.28 mu m is reported. The 3dB bandwidth of ridge waveguide lasers was measured to be 7.8GHz at 120mA under CW operation, demonstrating the potential For high speed operation of these devices.

引用

收藏

页码：1025 / 1026

页数：2

相关论文

共 6 条

[1] High power CW operation of InGaAsN lasers at 1.3μm [J].

Egorov, AY ;

Bernklau, D ;

Livshits, D ;

Ustinov, V ;

Alferov, ZI ;

Riechert, H .

ELECTRONICS LETTERS, 1999, 35 (19) :1643-1644

[2] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[3] 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers [J].

Nakahara, K ;

Kondow, M ;

Kitatani, T ;

Larson, MC ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) :487-488

[4]

OLHANSKY R, 1987, IEEE J QUANTUM ELECT, V23, P1410

[5] 1.3-μm GaInNAs-AlGaAs distributed feedback lasers [J].

Reinhardt, M ;

Fischer, M ;

Kamp, M ;

Hofmann, J ;

Forchel, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (03) :239-241

[6] 1.3 μm continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition [J].

Sato, S ;

Satoh, S .

ELECTRONICS LETTERS, 1999, 35 (15) :1251-1252