Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots

被引：40

作者：

Qasaimeh, O ^{[1
]}

Kamath, K ^{[1
]}

Bhattacharya, P ^{[1
]}

Phillips, J ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 11期

关键词：

D O I：

10.1063/1.121049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electro-optic properties of self-organized In0.4Ga0.6As/GaAs quantum dots have been studied experimentally. Single-mode ridge waveguide structures were grown by molecular beam epitaxy with self-organized In0.4Ga0.6As/GaAs quantum dots in the guiding region. The measured linear and quadratic electro-optic coefficients are 2.58><10(-11) m/V and 6.25x10(-17) m(2)/V-2, respectively, which are much higher than those obtained for bulk GaAs or quantum well structures. The measured transmission characteristics indicate that low-voltage amplitude modulators can be realized with quantum dot active regions. (C) 1998 American Institute of Physics.

引用

页码：1275 / 1277

页数：3

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