Lift-off lithography using an atomic force microscope

被引:81
作者
Bouchiat, V
Esteve, D
机构
[1] Serv. de Phys. de l'Etat Condense, Commsrt. À l'Energie Atomique
关键词
D O I
10.1063/1.117317
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a technique to fabricate nanostructures with an atomic force microscope (AFM). By taking advantage of the AFM tip sharpness, we engrave a narrow furrow in a soft polyimide layer. The furrow is then transferred using dry etching to a thin germanium layer which forms a suspended mask. Metallic lavers are then evaporated through this mask. Metallic lines with a 40 nm linewidth and single-electron transistors have been fabricated. This lift-off technique can be used on any substrate and allows easy alignment with previously fabricated structures. (C) 1996 American Institute of Physics.
引用
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页码:3098 / 3100
页数:3
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