Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes

被引:103
作者
de Carvalho, Luiz Claudio [1 ,2 ]
Schleife, Andre [1 ,2 ,3 ]
Bechstedt, Friedhelm [1 ,2 ]
机构
[1] Univ Jena, Inst Festkorpertheorie & Opt, D-07743 Jena, Germany
[2] Lawrence Livermore Natl Lab, ETSF, Livermore, CA 94550 USA
[3] Lawrence Livermore Natl Lab, Condensed Matter & Mat Div, Livermore, CA 94550 USA
关键词
EFFECTIVE-MASS PARAMETERS; MOMENTUM MATRIX-ELEMENT; BAND-STRUCTURE; AB-INITIO; PSEUDOPOTENTIAL CALCULATION; GREENS-FUNCTION; WURTZITE GAN; NITRIDE; SEMICONDUCTORS; PHASE;
D O I
10.1103/PhysRevB.84.195105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results for structural and elastic properties of wurtzite and zinc-blende group-III nitrides are calculated using the recently developed AM05 exchange-correlation (XC) functional. They are compared to calculations based on the local-density approximation or the generalized-gradient approximation. We find that AM05 provides a better agreement with experimental results. The atomic geometries are used to compute the quasiparticle band structures within Hedin's GW approximation, based on an initial electronic structure calculated using the HSE hybrid XC functional. Important band parameters such as gap energies, crystal-field splittings, spin-orbit coupling constants, and momentum matrix elements are derived. The less precisely known hole masses of InN and the anisotropic spin-orbit constants for wurtzite are predicted. The wave-vector-induced spin-orbit splittings of the valence and conduction bands are discussed.
引用
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页数:13
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