An Anisotropic Etching Effect in the Graphene Basal Plane

被引：248

作者：

Yang, Rong ^{[1
]}

Zhang, Lianchang ^{[1
]}

Wang, Yi ^{[2
]}

Shi, Zhiwen ^{[2
]}

Shi, Dongxia ^{[1
]}

Gao, Hongjun ^{[1
]}

Wang, Enge ^{[2
]}

Zhang, Guangyu ^{[1
]}

机构：

[1] Chinese Acad Sci, Nanoscale Phys & Device Lab, Inst Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Surface Phys Lab, Inst Phys, Beijing 100190, Peoples R China

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 36期

基金：

美国国家科学基金会;

关键词：

SCANNING-TUNNELING-MICROSCOPY; ELECTRONIC-PROPERTIES; CARBON NANOTUBES; LAYER GRAPHENE; QUANTUM DOTS; NANORIBBONS; GRAPHITE; STABILITY; SIO2;

D O I：

10.1002/adma.201000618

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A highly controllable, dry, anisotropic etching technique for graphene sheets has been achieved using hydrogen plasma etching. Zigzag edge formation was achieved by starting the etching at edges and defects and depends strongly on crystallographic orientation of the graphene. This dry, anisotropic etching approach combined with the standard lithographic technique is ideal for scalable graphene tailoring because the etching rates can be precisely controlled and the quality of the graphene can be preserved.

引用

页码：4014 / 4019

页数：6

共 40 条

[1] Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask [J].

Bai, Jingwei ;

Duan, Xiangfeng ;

Huang, Yu .

NANO LETTERS, 2009, 9 (05) :2083-2087

[2] Electronic structure and stability of semiconducting graphene nanoribbons [J].

Barone, Veronica ;

Hod, Oded ;

Scuseria, Gustavo E. .

NANO LETTERS, 2006, 6 (12) :2748-2754

[3] Edge state magnetism of single layer graphene nanostructures [J].

Bhowmick, Somnath ;

Shenoy, Vijay B. .

JOURNAL OF CHEMICAL PHYSICS, 2008, 128 (24)

[4] Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene [J].

Campos, Leonardo C. ;

Manfrinato, Vitor R. ;

Sanchez-Yamagishi, Javier D. ;

Kong, Jing ;

Jarillo-Herrero, Pablo .

NANO LETTERS, 2009, 9 (07) :2600-2604

[5] Intrinsic and extrinsic performance limits of graphene devices on SiO2 [J].

Chen, Jian-Hao ;

Jang, Chaun ;

Xiao, Shudong ;

Ishigami, Masa ;

Fuhrer, Michael S. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :206-209

[6] Graphene nano-ribbon electronics [J].

Chen, Zhihong ;

Lin, Yu-Ming ;

Rooks, Michael J. ;

Avouris, Phaedon .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 40 (02) :228-232

[7] Controlled Nanocutting of Graphene [J].

Ci, Lijie ;

Xu, Zhiping ;

Wang, Lili ;

Gao, Wei ;

Ding, Feng ;

Kelly, Kevin F. ;

Yakobson, Boris I. ;

Ajayan, Pulickel M. .

NANO RESEARCH, 2008, 1 (02) :116-122

[8] Crystallographic etching of few-layer graphene [J].

Datta, Sujit S. ;

Strachan, Douglas R. ;

Khamis, Samuel M. ;

Johnson, A. T. Charlie .

NANO LETTERS, 2008, 8 (07) :1912-1915

[9] Structures and electronic properties of surface/edges of nanodiamond and nanographite [J].

Enoki, Toshiaki ;

Kobayashi, Yousuke ;

Katsuyama, Chika ;

Osipov, Vladimir Yu. ;

Baidakova, Marina V. ;

Takai, Kazuyuki ;

Fukui, Ken-ichi ;

Vul, Alexander Ya. .

[10] Magnetism in graphene nanoislands [J].

Fernandez-Rossier, J. ;

Palacios, J. J. .

PHYSICAL REVIEW LETTERS, 2007, 99 (17)

← 1 2 3 4 →