Dynamic band-structure modulation of quantum wells by surface acoustic waves

被引：63

作者：

Sogawa, T

Santos, PV

Zhang, SK

Eshlaghi, S

Wieck, AD

Ploog, KH

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] NTT, Basic Res Labs, Kanagawa 2430198, Japan

[3] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.63.121307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dynamical modulation of the band structure of GaAs quantum wells by a surface acoustic wave (SAW) is investigated using photoluminescence (PL) spectroscopy. The strain field of the SAW modulates the excitonic transitions, leading to a splitting and to a polarization anisotropy of the excitonic PL lines. The oscillator strength of the split line gives direct information about the spatial distribution of carriers in the potential modulation induced by the SAW.

引用

页数：4

共 10 条

[1]

Bir GE Pikus G.L., 1974, Symmetry and Strain-Induced Effects in Semiconductors

[2] Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells [J].