Synthesis and Raman characteristics of hexagonal AlxGa1-xN alloy nanocrystalline solids through ammonothermal routes

被引:12
作者
Cao, YG
Chen, XL
Lan, YC
Li, JY
Zhang, Y
Yang, Z
Liang, JK
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2001年 / 72卷 / 01期
关键词
D O I
10.1007/s003390000714
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The AlxGa1-xN alloy nanocrystalline solids with x = 0 - 1 were successfully synthesized through ammonothermal routes. The alloys were formed only in the form of nanocrystalline solids, and not in other forms, i.e. of nanopowders or micro-crystals. The Raman scattering spectra of the alloy solids within the whole range of x values were investigated. One-mode-type behavior of A I(LO) phonon and two-mode-type behavior of E-2 phonon were clearly demonstrated. The intensity of E-2(GaN) mode decreases as x increases up to x = 0.8. For A(1)(TO), A(1)(LO), and E-2(GaN) phonon modes, the linewidth behaviors follow a pattern that exhibits a maximum at composition x = 0.5.
引用
收藏
页码:125 / 127
页数:3
相关论文
共 16 条
[1]   AlGaN nanoparticle/polymer composite: Synthesis, optical, and structural characterization [J].
Benaissa, M ;
Gonsalves, KE ;
Rangarajan, SP .
APPLIED PHYSICS LETTERS, 1997, 71 (25) :3685-3687
[2]   Raman analysis of the configurational disorder in AlxGa1-xN films [J].
Bergman, L ;
Bremser, MD ;
Perry, WG ;
Davis, RF ;
Dutta, M ;
Nemanich, RJ .
APPLIED PHYSICS LETTERS, 1997, 71 (15) :2157-2159
[3]   Blue emission and Raman scattering spectrum from AlN nanocrystalline powders [J].
Cao, YG ;
Chen, XL ;
Lan, YC ;
Li, JY ;
Xu, YP ;
Xu, T ;
Liu, QL ;
Liang, JK .
JOURNAL OF CRYSTAL GROWTH, 2000, 213 (1-2) :198-202
[4]   Synthesis, Raman scattering, and infrared spectra of a new condensed form of GaN nanophase material [J].
Cao, YG ;
Chen, XL ;
Lan, YC ;
Xu, YP ;
Xu, T ;
Liang, JK .
JOURNAL OF MATERIALS RESEARCH, 2000, 15 (02) :267-269
[5]   Synthesis and structure of nanocrystal-assembled bulk GaN [J].
Chen, XL ;
Cao, YG ;
Lan, YC ;
Xu, XP ;
Li, JQ ;
Lu, KQ ;
Jiang, PZ ;
Bai, ZG ;
Yu, YD ;
Liang, JK .
JOURNAL OF CRYSTAL GROWTH, 2000, 209 (01) :208-212
[6]   Raman study of the optical phonons in AlxGa1-xN alloys [J].
Cros, A ;
Angerer, H ;
Ambacher, O ;
Stutzmann, M ;
Hopler, R ;
Metzger, T .
SOLID STATE COMMUNICATIONS, 1997, 104 (01) :35-39
[7]   Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1-xAlxN solid solutions [J].
Demangeot, F ;
Groenen, J ;
Frandon, J ;
Renucci, MA ;
Briot, O ;
Clur, S ;
Aulombard, RL .
APPLIED PHYSICS LETTERS, 1998, 72 (21) :2674-2676
[8]   Exciton photo-luminescence of GaN bulk crystals grown by the AMMONO method [J].
Dwilinski, R ;
Doradzinski, R ;
Garczynski, J ;
Sierzputowski, L ;
Baranowski, JM ;
Kaminska, M .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3) :46-49
[9]   Some optical and EPR properties of strain-free GaN crystals obtained by AMMONO method [J].
Dwilinski, R ;
Baranowski, JM ;
Kaminska, M ;
Doradzinski, R ;
Garczynski, J ;
Sierzputowski, L ;
Palczewska, M .
ACTA PHYSICA POLONICA A, 1997, 92 (04) :737-741
[10]   AMMONO method of GaN and AlN production [J].
Dwilinski, R ;
Doradzinski, R ;
Garczynski, J ;
Sierzputowski, L ;
Baranowski, JM ;
Kaminska, M .
DIAMOND AND RELATED MATERIALS, 1998, 7 (09) :1348-1350