Synthesis and structure of nanocrystal-assembled bulk GaN

被引：41

作者：

Chen, XL

Cao, YG

Lan, YC

Xu, XP

Li, JQ

Lu, KQ

Jiang, PZ

Bai, ZG

Yu, YD

Liang, JK

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Peking Univ, Dept Phys, Electron Microscopy Lab, Beijing 100087, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 01期

基金：

中国国家自然科学基金;

关键词：

wurtzite GaN; nanocrystal-assembled bulk; synthesis; HRTEM;

D O I：

10.1016/S0022-0248(99)00522-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new condensed form of GaN, nanocrystal-assembled bulk (NAB) GaN, was obtained directly from reactions of metal Ga and NH4Cl in liquid ammonia at 350-500 degrees C. High-resolution transmission electron microscopy observations reveal that the NAB GaN consists of well-crystallized nanocrystals with wurtzite structure. The synchronous densificated NAB GaN is transparent to visible light while the constituted nanocrystals have an average size of about 12 nm. A possible synthesis mechanism is discussed. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 81.05.Ea; 78.66.Jg; 81.20. -n.

引用

页码：208 / 212

页数：5

共 18 条

[1] Synthesis routes and characterization of high-purity, single-phase gallium nitride powders
Balkas, CM
Davis, RF
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (09) : 2309 - 2312
[2] GROWTH OF BORON MONOPHOSPHIDE CRYSTALS BY CHEMICAL TRANSPORT
CHU, TL
JACKSON, JM
SMELTZER, RK
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 15 (04) : 254 - &
[3] Influence of precursor route on the photoluminescence of bulk nanocrystalline gallium nitride
Coffer, JL
Johnson, MA
Zhang, LB
Wells, RL
Janik, JF
[J]. CHEMISTRY OF MATERIALS, 1997, 9 (12) : 2671 - +
[4] Exciton photo-luminescence of GaN bulk crystals grown by the AMMONO method
Dwilinski, R
Doradzinski, R
Garczynski, J
Sierzputowski, L
Baranowski, JM
Kaminska, M
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 46 - 49
[5] Detonations of gallium azides: A simple route to hexagonal GaN nanocrystals
Frank, AC
Stowasser, F
Sussek, H
Pritzkow, H
Miskys, CR
Ambacher, O
Giersig, M
Fischer, RA
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (14) : 3512 - 3513
[6] Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction
Han, WQ
Fan, SS
Li, QQ
Hu, YD
[J]. SCIENCE, 1997, 277 (5330) : 1287 - 1289
[7] TOPOCHEMICAL CONTROL IN THE SOLID-STATE CONVERSION OF CYCLOTRIGALLAZANE INTO NANOCRYSTALLINE GALLIUM NITRIDE
HWANG, JW
CAMPBELL, JP
KOZUBOWSKI, J
HANSON, SA
EVANS, JF
GLADFELTER, WL
[J]. CHEMISTRY OF MATERIALS, 1995, 7 (03) : 517 - 525
[8] Poly(imidogallane): Synthesis of a crystalline 2-D network solid and its pyrolysis to form nanocrystalline gallium nitride in supercritical ammonia
Jegier, JA
McKernan, S
Gladfelter, WL
[J]. CHEMISTRY OF MATERIALS, 1998, 10 (08) : 2041 - +
[9] Exciton region reflectance of homoepitaxial GaN layers
Korona, KP
Wysmolek, A
Pakula, K
Stepniewski, R
Baranowski, JM
Grzegory, I
Lucznik, B
Wroblewski, M
Porowski, S
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (06) : 788 - 790
[10] FUNDAMENTAL ENERGY-GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA
MONEMAR, B
[J]. PHYSICAL REVIEW B, 1974, 10 (02): : 676 - 681

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