Blue emission and Raman scattering spectrum from AlN nanocrystalline powders

被引:91
作者
Cao, YG
Chen, XL
Lan, YC
Li, JY
Xu, YP
Xu, T
Liu, QL
Liang, JK
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
基金
中国国家自然科学基金;
关键词
wurtzite AlN; photoluminescence spectrum; Raman scattering spectrum;
D O I
10.1016/S0022-0248(00)00379-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Photoluminescence and Raman scattering spectra from AIN nanocrystalline powders are studied. A blue emission band centered at 420 nm (2.95 eV) is observed. This band may be ascribed to the transition from the shallow level of V-N to the ground state of the deep level of the V-Al(3-)-3 x O-N(+) defect complexes. A phonon structure resulting fi om the transition from the shallow level to the excited states of the deep level is also observed. The broadening of peaks and the low-wave-number-shift of the phonon frequency observed on the Raman scattering spectra are the result of nano-sized effects. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:198 / 202
页数:5
相关论文
共 15 条
[1]   Photoluminescence study of nano-crystalline GaN and AlN grown by reactive sputtering [J].
Abe, K ;
Nonomura, S ;
Kobayashi, S ;
Ohkubo, M ;
Gotoh, T ;
Nishio, M ;
Nitta, S ;
Okamoto, S ;
Kanemitsu, Y .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 :1096-1100
[2]   NATIVE DEFECTS IN GALLIUM NITRIDE [J].
BOGUSLAWSKI, P ;
BRIGGS, EL ;
BERNHOLC, J .
PHYSICAL REVIEW B, 1995, 51 (23) :17255-17258
[3]   ON PREPARATION OPTICAL PROPERTIES AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE [J].
COX, GA ;
CUMMINS, DO ;
KAWABE, K ;
TREDGOLD, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) :543-&
[4]  
EDGAR JH, 1994, PROPERTIES GROUP 3 N, P201
[5]   OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].
GLASER, ER ;
KENNEDY, TA ;
DOVERSPIKE, K ;
ROWLAND, LB ;
GASKILL, DK ;
FREITAS, JA ;
KHAN, MA ;
OLSON, DT ;
KUZNIA, JN ;
WICKENDEN, DK .
PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336
[6]   Raman studies on phonon modes in cubic AlGaN alloy [J].
Harima, H ;
Inoue, T ;
Nakashima, S ;
Okumura, H ;
Ishida, Y ;
Yoshida, S ;
Koizumi, T ;
Grille, H ;
Bechstedt, F .
APPLIED PHYSICS LETTERS, 1999, 74 (02) :191-193
[7]   Low-temperature synthesis and photoluminescence of AlN [J].
Lan, YC ;
Chen, XL ;
Cao, YG ;
Xu, YP ;
Xun, LD ;
Xu, T ;
Liang, JK .
JOURNAL OF CRYSTAL GROWTH, 1999, 207 (03) :247-250
[8]   Ab initio study of oxygen point defects in GaAs, GaN, and AlN [J].
Mattila, T ;
Nieminen, RM .
PHYSICAL REVIEW B, 1996, 54 (23) :16676-16682
[9]   MECHANISM OF YELLOW LUMINESCENCE IN GAN [J].
OGINO, T ;
AOKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) :2395-2405
[10]   Photoluminescence properties of nanocrystalline AlN layers grown by pulse plasma assisted CVD [J].
Olszyna, A ;
Siwiec, J ;
Dwilinski, R ;
Kaminska, M ;
Konwerska-Hrabowska, J ;
Sokolowska, A .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3) :170-173