Low-temperature synthesis and photoluminescence of AlN

被引:71
作者
Lan, YC [1 ]
Chen, XL
Cao, YG
Xu, YP
Xun, LD
Xu, T
Liang, JK
机构
[1] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[2] Peking Univ, State Key Lab Chem & Applicat Rare Earth Mat, Beijing 100080, Peoples R China
[3] Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
基金
中国国家自然科学基金;
关键词
wurtzite AlN; synthesis; PL spectrum;
D O I
10.1016/S0022-0248(99)00448-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
High-quality aluminum nitride powder was obtained through the reaction of aluminum metal with ammonia at 450 degrees C in an autoclave. The synthesized powder was characterized by X-ray powder diffraction, high-resolution transmission electron microscopy (HRTEM) and photoluminescence spectrum. X-ray diffraction and HRTEM indicated that the powder consisted of wurtzite AIN with an average size of about 32 nm. Photoluminescence spectrum confirmed the existence of a blue luminescence band in AIN due to nitrogen vacancies. A possible low-temperature synthesis mechanism was discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:247 / 250
页数:4
相关论文
共 18 条
[1]   CARBOTHERMAL SYNTHESIS OF ALUMINUM NITRIDE USING SUCROSE [J].
BAIK, Y ;
SHANKER, K ;
MCDERMID, JR ;
DREW, RAL .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (08) :2165-2172
[2]   Structure and heat capacity of wurtzite GaN from 113 to 1073 K [J].
Chen, XL ;
Lan, YC ;
Liang, JK ;
Cheng, XR ;
Cu, YP ;
Xu, T ;
Jiang, PZ ;
Lu, KQ .
CHINESE PHYSICS LETTERS, 1999, 16 (02) :107-108
[3]  
CHEN XL, IN PRESS J CRYSTAL G
[4]   ON PREPARATION OPTICAL PROPERTIES AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE [J].
COX, GA ;
CUMMINS, DO ;
KAWABE, K ;
TREDGOLD, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) :543-&
[5]  
DONCE FA, 1996, APPL PHYS LETT, V68, P57
[6]   REACTION OF AMALGAMS WITH AMMONIA [J].
ETTMAYER, P ;
JANGG, G .
MONATSHEFTE FUR CHEMIE, 1973, 104 (04) :1120-1130
[7]   III-V NITRIDES - THERMODYNAMICS AND CRYSTAL-GROWTH AT HIGH N-2 PRESSURE [J].
GRZEGORY, I ;
JUN, J ;
BOCKOWSKI, M ;
KRUKOWSKI, S ;
WROBLEWSKI, M ;
LUCZNIK, B ;
POROWSKI, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (3-4) :639-647
[8]   ELECTRONIC-STRUCTURES AND DOPING OF INN, INXGA1-XN, AND INXAL1-XN [J].
JENKINS, DW ;
DOW, JD .
PHYSICAL REVIEW B, 1989, 39 (05) :3317-3329
[9]  
KHAN MA, 1993, APPL PHYS LETT, V63, P1214, DOI 10.1063/1.109775
[10]   LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].
MORKOC, H ;
STRITE, S ;
GAO, GB ;
LIN, ME ;
SVERDLOV, B ;
BURNS, M .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398