Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes

被引：283

作者：

Lupan, Oleg ^{[1
]}

Pauporte, Thierry ^{[1
]}

Viana, Bruno

机构：

[1] Chim ParisTech, CNRS, Lab Electrochim Chim Interfaces & Modelisat Energ, UMR7575, F-75231 Paris 05, France

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 30期

关键词：

ZINC-OXIDE; ROOM-TEMPERATURE; RAMAN-SCATTERING; GALLIUM NITRIDE; NANOROD ARRAYS; P-GAN; ELECTRODEPOSITION; FABRICATION; FILMS; EMISSION;

D O I：

10.1002/adma.201000611

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

UV LEDs: The fabrication of an ITO/ZnO-nanowires/p-GaN/In-Ga LED structure is reported with an active emitting layer made of high-quality epitaxial ZnO grown electrochemically from a solution at low temperature (85 degrees C). A narrow ultra-violet electroluminescence centered at 397 nm is obtained at room temperature starting at an applied forward bias of 4.4 V (see figure). The emission is of high brightness and stable at low applied voltages beyond 6 V.

引用

页码：3298 / +

页数：6

共 34 条

[31] Fabrication of GaN nanowire arrays by confined epitaxy [J].

Wang, Xin ;

Sun, Xinyu ;

Fairchild, Michael ;

Hersee, Stephen D. .

APPLIED PHYSICS LETTERS, 2006, 89 (23)

[32] Zinc oxide nanowires: controlled low temperature growth and some electrochemical and optical nano-devices [J].

Willander, M. ;

Yang, L. L. ;

Wadeasa, A. ;

Ali, S. U. ;

Asif, M. H. ;

Zhao, Q. X. ;

Nur, O. .

JOURNAL OF MATERIALS CHEMISTRY, 2009, 19 (07) :1006-1018

[33] Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film [J].

Zhang, Xiao-Mei ;

Lu, Ming-Yen ;

Zhang, Yue ;

Chen, Lih-J. ;

Wang, Zhong Lin .

ADVANCED MATERIALS, 2009, 21 (27) :2767-+

[34] Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate [J].

Zhang, Y ;

Jia, HB ;

Wang, RM ;

Chen, CP ;

Luo, XH ;

Yu, DP ;

Lee, CJ .

APPLIED PHYSICS LETTERS, 2003, 83 (22) :4631-4633

← 1 2 3 4 →