Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film

被引：436

作者：

Zhang, Xiao-Mei ^{[1
,2
]}

Lu, Ming-Yen ^{[2
,3
]}

Zhang, Yue ^{[1
]}

Chen, Lih-J. ^{[3
]}

Wang, Zhong Lin ^{[2
]}

机构：

[1] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 27期

基金：

中国国家自然科学基金;

关键词：

ELECTROLUMINESCENCE; DEPOSITION; DENSITY; EPITAXY; DEVICES; LEDS;

D O I：

10.1002/adma.200802686

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Bright n-ZnO nanowire/p-GaN film hybrid heterojunction light-emitting-diode (LED) devices are fabricated by directly growing n-type ZnO-nanowire arrays on p-GaN wafers. UV-blue electroluminescence emission was observed from the heterojunction diodes and the heterojunction LED device, exhibited a high sensitivity in responding to UV irradiation.

引用

页码：2767 / +

页数：5

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