Fabrication of the hybrid ZnO LED structure grown on p-type GaN by metal organic chemical vapor deposition

被引：92

作者：

Kim, Dong Chan ^{[1
]}

Han, Won Suk ^{[1
]}

Kong, Bo Hyun ^{[1
]}

Cho, Hyung Koun ^{[1
]}

Hong, Chang Hee ^{[2
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea

[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Dept Semicond Sci & Technol, Chonju 561756, Chonbuk, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷 / 386-390期

关键词：

ZnO; MOCVD; LED; p-GAN;

D O I：

10.1016/j.physb.2007.08.194

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

LEDs based on the n-ZnO/p-GaN heterojunction were successfully fabricated with the top/middle/bottorn layer sequence of ZnO/ ZnO nanorods/p-GaN by continuously controlling the growth parameters via metal organic chemical vapor deposition. The ZnO top layer was deposited as a contact layer for the application of nanorods as an active layer, while p-GaN was used as a p-type layer, instead of p-ZnO. The ZnO film grown on ZnO nanorods with high crystalline quality on GaN exhibited the epitaxial properties of a single domain. The light-emitting device fabricated using this hybrid structure demonstrated a forward turn-on voltage of 11 V and a high reverse current, which require further development for device fabrication. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：386 / 390

页数：5

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