Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN

被引：725

作者：

Park, WI ^{[1
]}

Yi, GC ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, POSTECH, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 01期

关键词：

D O I：

10.1002/adma.200305729

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electrolurninescent (EL) devices (see Figure) have been fabricated using n-ZnO nanorod arrays grown on p-GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p-n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse-bias voltage of 3 V.

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页码：87 / +

页数：5

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