Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors

被引：83

作者：

Servati, P ^{[1
]}

Striakhilev, D ^{[1
]}

Nathan, A ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 11期

基金：

加拿大自然科学与工程研究理事会;

关键词：

amorphous semiconductors; contact resistance; mobility; parameter extraction; thin-film transistors (TFTs); threshold voltage;

D O I：

10.1109/TED.2003.818156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents modeling and parameter extraction of the above-threshold characteristics of hydrogenated amorphorous silicon (a-Si:H) thin-film transistors (TFTs) in both linear and saturation regions of operation. A bias- and geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is introduced, which conveys the properties of the active semiconducting layer. A method for extraction of model parameters such as threshold voltage, effective mobility, band-tail slope, and contact resistance from the measurement results is presented. This not only provides insight to the device properties, which are highly fabrication-dependent, but also enables accurate and reliable TFT circuit simulation. The techniques presented here form the basis for extraction of physical parameters for other TFTs with similar gap properties, such as organic and polymer TFTs.

引用

页码：2227 / 2235

页数：9

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