Readout circuit in active pixel sensors in amorphous silicon technology

被引:42
作者
Karim, KS [1 ]
Nathan, A [1 ]
机构
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
active pixel; amorphous silicon; integrated pixel amplifier;
D O I
10.1109/55.954914
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The most widely used architecture in large area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, reading small PPS output signals requires external circuitry such as column charge amplifiers that produce additional noise and reduce the minimum readable sensor input signal. This work presents a current mode amorphous silicon active pixel that performs on-pixel amplification of noise-vulnerable sensor input signals to minimize the effect of external readout noise sources associated with "off-chip" charge amplifiers. Preliminary results indicate excellent small signal linearity along with a high and programmable charge gain.
引用
收藏
页码:469 / 471
页数:3
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