CMOS ACTIVE PIXEL IMAGE SENSOR

被引：104

作者：

MENDIS, S ^{[1
]}

KEMENY, SE ^{[1
]}

FOSSUM, ER ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,CTR SPACE MICROELECTR TECHNOL,PASADENA,CA 91109

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 03期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/16.275235

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new CMOS active pixel image sensor is reported. The sensor uses a 2.0 mu m double-poly, double-metal foundry CMOS process and is realized as a 128 x 128 array of 40 mu m x 40 mu m pixels. The sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor applications.

引用

页码：452 / 453

页数：2

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