Application of a new circuit design oriented Q extraction technique to inductors in silicon IC's

被引：9

作者：

Chen, T ^{[1
]}

Kim, K ^{[1
]}

O, K ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, SiMICS, Gainesville, FL 32611 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a circuit design oriented Q extraction technique based on bandwidth (Q(bw)), Q factors of a wide range of inductor structures are studied and compared to Q factors extracted using the conventional technique (Q(conv) =-Im(y(11))/Re(y(11))) This new technique corrects the under-estimation problem of the Q(conv) at moderate to high frequencies. Use of Q(conv) can result erroneous conclusions leading to improper inductor optimization. To make the difference between Q(conv) and Q(bw) lower than 10% for all the examined inductors, the \(W) over bar(m)\/\(W) over bar(e)\ (average magnetic energy/average electrical energy) ratio computed using the extracted inductor model parameters should be greater than similar to 20.

引用

页码：527 / 530

页数：4

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