First principles study of work functions of single wall carbon nanotubes

被引:219
作者
Shan, B [1 ]
Cho, KJ
机构
[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
关键词
D O I
10.1103/PhysRevLett.94.236602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We perform first principles calculations on work functions of single wall carbon nanotubes, which can be divided into two classes according to tube diameter (D). For class I tubes (D > 1 nm), work functions lie within a narrow distribution (similar to 0.1 eV) and show no significant chirality or diameter dependence. For class II tubes (D < 1 nm), work functions show substantial changes, with armchair tubes decreasing monotonically with diameter, while zigzag tubes show the opposite trend. Surface dipoles and hybridization effects are shown to be responsible for the observed work function change.
引用
收藏
页数:4
相关论文
共 26 条
[1]   HYBRIDIZATION EFFECTS AND METALLICITY IN SMALL RADIUS CARBON NANOTUBES [J].
BLASE, X ;
BENEDICT, LX ;
SHIRLEY, EL ;
LOUIE, SG .
PHYSICAL REVIEW LETTERS, 1994, 72 (12) :1878-1881
[2]   NEW METHOD FOR CALCULATING 1-PARTICLE GREENS FUNCTION WITH APPLICATION TO ELECTRON-GAS PROBLEM [J].
HEDIN, L .
PHYSICAL REVIEW, 1965, 139 (3A) :A796-+
[3]   Carbon nanotubes as Schottky barrier transistors [J].
Heinze, S ;
Tersoff, J ;
Martel, R ;
Derycke, V ;
Appenzeller, J ;
Avouris, P .
PHYSICAL REVIEW LETTERS, 2002, 89 (10)
[4]   HELICAL MICROTUBULES OF GRAPHITIC CARBON [J].
IIJIMA, S .
NATURE, 1991, 354 (6348) :56-58
[5]   Ballistic carbon nanotube field-effect transistors [J].
Javey, A ;
Guo, J ;
Wang, Q ;
Lundstrom, M ;
Dai, HJ .
NATURE, 2003, 424 (6949) :654-657
[6]   SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].
KOHN, W ;
SHAM, LJ .
PHYSICAL REVIEW, 1965, 140 (4A) :1133-&
[7]   Nanotube molecular wires as chemical sensors [J].
Kong, J ;
Franklin, NR ;
Zhou, CW ;
Chapline, MG ;
Peng, S ;
Cho, KJ ;
Dai, HJ .
SCIENCE, 2000, 287 (5453) :622-625
[8]   Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set [J].
Kresse, G ;
Furthmuller, J .
COMPUTATIONAL MATERIALS SCIENCE, 1996, 6 (01) :15-50
[9]   Role of Fermi-level pinning in nanotube Schottky diodes [J].
Léonard, F ;
Tersoff, J .
PHYSICAL REVIEW LETTERS, 2000, 84 (20) :4693-4696
[10]   Polarized absorption spectra of single-walled 4Å carbon nanotubes aligned in channels of an AlPO4-5 single crystal -: art. no. 127401 [J].
Li, ZM ;
Tang, ZK ;
Liu, HJ ;
Wang, N ;
Chan, CT ;
Saito, R ;
Okada, S ;
Li, GD ;
Chen, JS ;
Nagasawa, N ;
Tsuda, S .
PHYSICAL REVIEW LETTERS, 2001, 87 (12) :127401/1-127401/4