Future emerging new memory technologies

被引：10

作者：

Kim, K ^{[1
]}

Lee, SY ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Memory Div, Yongin, Gyeonggi Do, South Korea

来源：

INTEGRATED FERROELECTRICS | 2004年 / 64卷

关键词：

new memory; mobile electronics; next generation mobile memory; high density FRAM; MRAM; PRAM; cell scaling; PZT; GST; MTJ;

D O I：

10.1080/10584580490893277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New type of nonvolatile memories like FRAM, PRAM. MRAM which are capable of fast and unlimited write can ideally perform next generation high level mobile functions and are being focused as candidates for next generation mobile memory. Among new memory candidates, MRAM has the fastest speed, FRAM has the lowest power consumption and PRAM has excellent cell scalability. Such unique feature of each new memory candidate will be effectively utilized in next generation mobile electronics where memory function will be very diversified and specified as well as unified. In this paper, new memory technologies will be viewed in respect of current technology status, technical challenges encountered, and the solution for technology barriers.

引用

页码：3 / 14

页数：12

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