Analysis of position-dependent light extraction of GaN-based LEDs

被引：77

作者：

Lee, TX ^{[1
]}

Lin, CY ^{[1
]}

Ma, SH ^{[1
]}

Sun, CC ^{[1
]}

机构：

[1] Natl Cent Univ, Inst Opt Sci, Chungli 320, Taiwan

来源：

OPTICS EXPRESS | 2005年 / 13卷 / 11期

关键词：

D O I：

10.1364/OPEX.13.004175

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture. (C) 2005 Optical Society of America.

引用

收藏

页码：4175 / 4179

页数：5

相关论文

共 9 条

[1] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[2] Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching [J].

Gao, Y ;

Fujii, T ;

Sharma, R ;

Fujito, K ;

Denbaars, SP ;

Nakamura, S ;

Hu, EL .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (5A) :L637-L639

[3] Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry [J].

Guo, X ;

Li, YL ;

Schubert, EF .

APPLIED PHYSICS LETTERS, 2001, 79 (13) :1936-1938

[4] Improved light-output and electrical performance of InGaN-based, light-emitting diode by microroughening of the p-GaN surface [J].

Huh, C ;

Lee, KS ;

Kang, EJ ;

Park, SJ .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :9383-9385

[5] High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency [J].

Krames, MR ;

Ochiai-Holcomb, M ;

Höfler, GE ;

Carter-Coman, C ;

Chen, EI ;

Tan, IH ;

Grillot, P ;

Gardner, NF ;

Chui, HC ;

Huang, JW ;

Stockman, SA ;

Kish, FA ;

Craford, MG ;

Tan, TS ;

Kocot, CP ;

Hueschen, M ;

Posselt, J ;

Loh, B ;

Sasser, G ;

Collins, D .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2365-2367

[6] Analysis of light-emitting diodes by Monte Carlo photon simulation [J].

Lee, SJ .

APPLIED OPTICS, 2001, 40 (09) :1427-1437

[7] Illumination with solid state lighting technology [J].

Steigerwald, DA ;

Bhat, JC ;

Collins, D ;

Fletcher, RM ;

Holcomb, MO ;

Ludowise, MJ ;

Martin, PS ;

Rudaz, SL .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :310-320

[8] Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array [J].

Sun, CC ;

Lin, CY ;

Lee, TX ;

Yang, TH .

OPTICAL ENGINEERING, 2004, 43 (08) :1700-1701

[9]

Zukauskas A., 2002, Introduction to solid-state lighting