Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching

被引：98

作者：

Gao, Y ^{[1
]}

Fujii, T

Sharma, R

Fujito, K

Denbaars, SP

Nakamura, S

Hu, EL

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, UCSB Grp, NICP ERATO JST, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 5A期

关键词：

N-face GaN; roughening; hexagonal pyramid; photo-enhanced; chemical wet etching;

D O I：

10.1143/JJAP.43.L637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A photo-enhanced chemical wet etching technique is presented to form a roughened surface morphology with hexagonal symmetry on laser lift-off (LLO) N-face GaN grown by metalorganic chemical vapor deposition (MOCVD). An aqueous solution of KOH was used as etch electrolyte. The etched surface showed cones with hexagonal pyramid structures bound by {1011} facets. A detailed analysis of the etch rates and time-evolution of the surface morphology is described as a function of KOH concentration (1.25 M to 8.8 M). The comparison between (0001) N-face and Ga-face GaN etch morphology is discussed. This roughened hexagonal surface morphology can be applied to enhance the external efficiency in GaN based light-emitting diodes (LEDs).

引用

页码：L637 / L639

页数：3

共 12 条

[1] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[2]

GAO Y, 2004, INT J HIGH SPEED ELE

[3]

GAO Y, IN PRESS APPL PHYS L

[4] Improved light-output and electrical performance of InGaN-based, light-emitting diode by microroughening of the p-GaN surface [J].

Huh, C ;

Lee, KS ;

Kang, EJ ;

Park, SJ .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :9383-9385

[5] Room-temperature photoenhanced wet etching of GaN [J].

Minsky, MS ;

White, M ;

Hu, EL .

APPLIED PHYSICS LETTERS, 1996, 68 (11) :1531-1533

[6]

Nakamura S., 1997, BLUE LASER DIODE GAN

[7] GaN nanotip pyramids formed by anisotropic etching [J].

Ng, HM ;

Weimann, NG ;

Chowdhury, A .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) :650-653

[8] Wet etching of GaN grown by molecular beam epitaxy on Si(111) [J].

Palacios, T ;

Calle, F ;

Varela, M ;

Ballesteros, C ;

Monroy, E ;

Naranjo, FB ;

Sánchez-García, MA ;

Calleja, E ;

Muñoz, E .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (10) :996-1000

[9] Chemical mechanical polishing of gallium nitride [J].

Tavernier, PR ;

Margalith, T ;

Coldren, LA ;

DenBaars, SP ;

Clarke, DR .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (08) :G61-G64

[10] High-power AlGaInN flip-chip light-emitting diodes [J].

Wierer, JJ ;

Steigerwald, DA ;

Krames, MR ;

O'Shea, JJ ;

Ludowise, MJ ;

Christenson, G ;

Shen, YC ;

Lowery, C ;

Martin, PS ;

Subramanya, S ;

Götz, W ;

Gardner, NF ;

Kern, RS ;

Stockman, SA .

APPLIED PHYSICS LETTERS, 2001, 78 (22) :3379-3381

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