Raman scattering study of photoluminescent spark-processed porous InP

被引：40

作者：

Rojas-López, M ^{[1
]}

Nieto-Navarro, J ^{[1
]}

Rosendo, E ^{[1
]}

Navarro-Contreras, H ^{[1
]}

Vidal, MA ^{[1
]}

机构：

[1] Univ Autonoma San Luis Potosi, Inst Invest Comun Opt, San Luis Potosi 78100, Mexico

来源：

THIN SOLID FILMS | 2000年 / 379卷 / 1-2期

关键词：

Raman scattering; indium phosphide; oxidation; semiconductors;

D O I：

10.1016/S0040-6090(00)01565-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman scattering has been used to study porous InP (001) samples prepared by the application of high voltage spark discharges in air and argon atmospheres. For photoluminescent material, Raman scattering as well as Normaski microscopy of a transversally cut sample, (011) face, show the existence of two very distinct zones, that lie at different depths: a superficial luminescent region constituted mostly by In2O3 and InPO4 oxides, and a second adjacent deeper zone formed by damaged InP. These results highlight the role that the oxidation plays in this material as source of the visible luminescence that the material emits when excited with UV radiation. The deepest region shows InP-like vibrational behavior with broad longitudinal optical (LO) and transversal optical (TO) phonon bands. A fit of the observed lineshapes of the TO and LO modes using the spatial correlation model provides an estimate of the size of the crystalline regions (L similar to 30 Angstrom). (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 6

页数：6

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