Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs

被引：15

作者：

Hansch, W

Rao, VR

Fink, C

Kaesen, F

Eisele, I

机构：

[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 739, Japan

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA

[3] Univ Bundeswehr Munchen, D-85577 Neubiberg, Germany

来源：

THIN SOLID FILMS | 1998年 / 321卷

关键词：

Si-MBE; vertical sub-100 nm MOSFETs; PDBFET; electric-field tailoring; velocity overshoot; avalanche suppression;

D O I：

10.1016/S0040-6090(98)00474-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We introduce the concept of electric-field-tailoring in MBE-grown vertical metal-oxide semiconductor field-effect transistors (MOS-FETs) and show that significant improvements in terms of supply voltage, current and speed are achievable in such MOSFETs by employing a planar-doped-barrier MOSFET (PDBFET) concept. Investigation of electrical characteristics and carrier transport in sub-100 nm channel PDBFETs shows the predicted improvements compared with classical MOSFETs. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：206 / 214

页数：9

共 19 条

[1] AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON [J].