Growth-mode modification of Bi on CdTe(111)A using Te monolayer deposition

被引:25
作者
Cho, SL [1 ]
DiVenere, A
Wong, GK
Ketterson, JB
Meyer, JR
Hong, JI
机构
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[3] USN, Res Lab, Washington, DC 20375 USA
[4] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 04期
关键词
D O I
10.1103/PhysRevB.58.2324
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Bi deposited on the CdTe(lll)A (Cd-terminated) surface grows by three-dimensional (3D) islanding, while Bi deposited on the CdTe(lll)B (Te-terminated) grows layer-by-layer. However, introducing a Te monolayer (ML) on the CdTe(lll)A surface reduces the interfacial energy, thereby changing the growth mode of Bi from 3D islandlike to layer-by-layer growth. The Te ML remains where it is deposited, which differs from the growth mode in which the surface-active agent floats on the growing surface. By incorporating appropriate Te ML's, Bi/CdTe superlattices with sharper interfaces were observed. These superlattices were characterized by x-ray diffraction and transmission electron microscopy.
引用
收藏
页码:2324 / 2328
页数:5
相关论文
共 36 条
  • [1] Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates
    Cho, S
    DiVenere, A
    Wong, GK
    Ketterson, JB
    Meyer, JR
    Hoffman, CA
    [J]. SOLID STATE COMMUNICATIONS, 1997, 102 (09) : 673 - 676
  • [2] CHO SH, UNPUB
  • [3] SUPPRESSION OF 3-DIMENSIONAL ISLAND NUCLEATION DURING GAAS GROWTH ON SI(100)
    CHOI, CH
    AI, R
    BARNETT, SA
    [J]. PHYSICAL REVIEW LETTERS, 1991, 67 (20) : 2826 - 2829
  • [4] SURFACTANTS IN EPITAXIAL-GROWTH
    COPEL, M
    REUTER, MC
    KAXIRAS, E
    TROMP, RM
    [J]. PHYSICAL REVIEW LETTERS, 1989, 63 (06) : 632 - 635
  • [5] INFLUENCE OF SURFACTANTS IN GE AND SI EPITAXY ON SI(001)
    COPEL, M
    REUTER, MC
    VONHOEGEN, MH
    TROMP, RM
    [J]. PHYSICAL REVIEW B, 1990, 42 (18): : 11682 - 11689
  • [6] H-COVERAGE DEPENDENCE OF SI(001) HOMOEPITAXY
    COPEL, M
    TROMP, RM
    [J]. PHYSICAL REVIEW LETTERS, 1994, 72 (08) : 1236 - 1239
  • [7] POLARITY INVERSION OF CDTE(111) ORIENTATION GROWN ON BI (00.1) BY MOLECULAR-BEAM EPITAXY
    DIVENERE, A
    YI, XJ
    HOU, CL
    WANG, HC
    KETTERSON, JB
    WONG, GK
    SOU, IK
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (21) : 2640 - 2642
  • [8] EAGLESHAM DJ, 1993, PHYS REV LETT, V70, P96
  • [9] Surfactant adsorption site and growth mechanism of Ge- on Ga-terminated Si(111)
    Falta, J
    Schmidt, T
    Hille, A
    Materlik, G
    [J]. PHYSICAL REVIEW B, 1996, 54 (24): : 17288 - 17291
  • [10] SURFACTANT COVERAGE AND EPITAXY OF GE ON GA-TERMINATED SI(111)
    FALTA, J
    COPEL, M
    LEGOUES, FK
    TROMP, RM
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (23) : 2962 - 2964