Magnon- and phonon-assisted tunneling in a high-magnetoresistance tunnel junction using Co75Fe25 ferromagnetic electrodes

被引:20
作者
Lü, C
Wu, MW [1 ]
Han, XF
机构
[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Anhui, Peoples R China
[2] Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China
[3] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1016/j.physleta.2003.10.010
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Magnetoelectric properties of the spin-valve-type tunnel junction of Ta(5 nm)/Ni79Fe21(25 nm)/Ir22Mn78(12 nm)/Co75Fe25(4 nm)/Al(0.8 nm)-oxide/Co75Fe25(4 nm)/Ni79Fe21(20 nm)/Ta(5 nm) are investigated both experimentally and theoretically. It is shown that both magnon and phonon excitations contribute to the tunneling process. Moreover, we show that there are two branches of magnon with spin S = 1/2 and 3/2, respectively. The theoretical results are in good agreement with the experimental data. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:205 / 210
页数:6
相关论文
共 23 条
[1]   Tunneling of electrons in conventional and half-metallic systems: Towards very large magnetoresistance [J].
Bratkovsky, AM .
PHYSICAL REVIEW B, 1997, 56 (05) :2344-2347
[2]   Assisted tunneling in ferromagnetic junctions and half-metallic oxides [J].
Bratkovsky, AM .
APPLIED PHYSICS LETTERS, 1998, 72 (18) :2334-2336
[3]   Bias dependence in spin-polarized tunneling [J].
Chui, ST .
PHYSICAL REVIEW B, 1997, 55 (09) :5600-5603
[4]   Magnetic tunneling applied to memory [J].
Daughton, JM .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3758-3763
[5]   Absence of zero-bias anomaly in spin-polarized vacuum tunneling in Co(0001) [J].
Ding, HF ;
Wulfhekel, W ;
Henk, J ;
Bruno, P ;
Kirschner, J .
PHYSICAL REVIEW LETTERS, 2003, 90 (11) :4
[6]   Analyses of intrinsic magnetoelectric properties in spin-valve-type tunnel junctions with high magnetoresistance and low resistance [J].
Han, XF ;
Yu, ACC ;
Oogane, M ;
Murai, J ;
Daibou, T ;
Miyazaki, T .
PHYSICAL REVIEW B, 2001, 63 (22)
[7]   Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes [J].
Han, XF ;
Oogane, M ;
Kubota, H ;
Ando, Y ;
Miyazaki, T .
APPLIED PHYSICS LETTERS, 2000, 77 (02) :283-285
[8]   Inelastic magnon and phonon excitations in Al1-xCox/Al1-xCox-oxide/Al tunnel junctions [J].
Han, XF ;
Murai, J ;
Ando, Y ;
Kubota, H ;
Miyazaki, T .
APPLIED PHYSICS LETTERS, 2001, 78 (17) :2533-2535
[9]   Many-body effects on the tunneling magnetoresistance of spin valves [J].
Hong, JS ;
Wu, RQ ;
Mills, DL .
PHYSICAL REVIEW B, 2002, 66 (10) :1-3
[10]   TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].
JULLIERE, M .
PHYSICS LETTERS A, 1975, 54 (03) :225-226