Magnon- and phonon-assisted tunneling in a high-magnetoresistance tunnel junction using Co75Fe25 ferromagnetic electrodes

被引:20
作者
Lü, C
Wu, MW [1 ]
Han, XF
机构
[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Anhui, Peoples R China
[2] Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China
[3] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1016/j.physleta.2003.10.010
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Magnetoelectric properties of the spin-valve-type tunnel junction of Ta(5 nm)/Ni79Fe21(25 nm)/Ir22Mn78(12 nm)/Co75Fe25(4 nm)/Al(0.8 nm)-oxide/Co75Fe25(4 nm)/Ni79Fe21(20 nm)/Ta(5 nm) are investigated both experimentally and theoretically. It is shown that both magnon and phonon excitations contribute to the tunneling process. Moreover, we show that there are two branches of magnon with spin S = 1/2 and 3/2, respectively. The theoretical results are in good agreement with the experimental data. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:205 / 210
页数:6
相关论文
共 23 条
[11]   Band structure and density of states effects in Co-based magnetic tunnel junctions [J].
LeClair, P ;
Kohlhepp, JT ;
van de Vin, CH ;
Wieldraaijer, H ;
Swagten, HJM ;
de Jonge, WJM ;
Davis, AH ;
MacLaren, JM ;
Moodera, JS ;
Jansen, R .
PHYSICAL REVIEW LETTERS, 2002, 88 (10) :4
[12]   Yoke-type TMR head with front-stacked gap for perpendicular magnetic recording [J].
Machida, K ;
Hayashi, N ;
Miyamoto, Y ;
Tamaki, T ;
Okuda, H .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2001, 235 (1-3) :201-207
[13]   GIANT MAGNETIC TUNNELING EFFECT IN FE/AL2O3/FE JUNCTION [J].
MIYAZAKI, T ;
TEZUKA, N .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1995, 139 (03) :L231-L234
[14]   LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].
MOODERA, JS ;
KINDER, LR ;
WONG, TM ;
MESERVEY, R .
PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276
[15]   Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) [J].
Parkin, SSP ;
Roche, KP ;
Samant, MG ;
Rice, PM ;
Beyers, RB ;
Scheuerlein, RE ;
O'Sullivan, EJ ;
Brown, SL ;
Bucchigano, J ;
Abraham, DW ;
Lu, Y ;
Rooks, M ;
Trouilloud, PL ;
Wanner, RA ;
Gallagher, WJ .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :5828-5833
[16]   Spin-valve-like properties and annealing effect in ferromagnetic tunnel junctions [J].
Sato, M ;
Kobayashi, K .
IEEE TRANSACTIONS ON MAGNETICS, 1997, 33 (05) :3553-3555
[17]   Current-driven excitation of magnetic multilayers [J].
Slonczewski, JC .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1996, 159 (1-2) :L1-L7
[18]   Dynamic switching of tunnel junction MRAM cell with nanosecond field pulses [J].
Sousa, RC ;
Freitas, PP .
IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) :2770-2772
[19]   Magneto-tunneling injection device (MAGTID) [J].
Stein, S ;
Schmitz, R ;
Kohlstedt, H .
SOLID STATE COMMUNICATIONS, 2001, 117 (10) :599-603
[20]   Progress and outlook for MRAM technology [J].
Tehrani, S ;
Slaughter, JM ;
Chen, E ;
Durlam, M ;
Shi, J ;
DeHerrera, M .
IEEE TRANSACTIONS ON MAGNETICS, 1999, 35 (05) :2814-2819