Optical constants of GaAs from 0.73 to 6.60 eV for dielectric film thickness metrology in compound semiconductor manufacturing

被引：5

作者：

Zollner, S ^{[1
]}

Zarr, D ^{[1
]}

机构：

[1] Motorola Inc, Semicond Prod Sector, Mesa, AZ 85202 USA

来源：

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年

关键词：

D O I：

10.1109/ISCS.2000.947121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article describes the optical constants of GaAs from 0.73 to 6.60 eV determined using spectroscopic ellipsometry. Our setup includes a computer-controlled MgF2 Berek waveplate compensator, which allows exact measurements of the ellipsometric angle Delta below the band gap. Therefore, our data are very accurate over a broad range. We apply our results to determine thicknesses and optical properties of various dielectrics (SiO2, silicon nitride, and sputtered AlN) on GaAs.

引用

页码：13 / 18

页数：6

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