Electromigration and Thermomigration in Pb-Free Flip-Chip Solder Joints

被引:246
作者
Chen, Chih [3 ]
Tong, H. M. [2 ]
Tu, K. N. [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Adv Semicond Engn Inc, Cent Labs, Kaohsiung 811, Taiwan
[3] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
来源
ANNUAL REVIEW OF MATERIALS RESEARCH, VOL 40 | 2010年 / 40卷
关键词
microelectronic packaging; diffusion; reliability; current stressing; Joule heating; thermal gradient; underbump metallization; LARGE-SCALE-INTEGRATION; FAILURE MECHANISMS; INTERFACIAL REACTIONS; INTERMETALLIC GROWTH; VOID FORMATION; TI/CR-CU/CU; MEAN-TIME; CU; MICROSTRUCTURE; RELIABILITY;
D O I
10.1146/annurev.matsci.38.060407.130253
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pb-free solders have replaced Pb-containing SnPb solders in the electronic packaging industry due to environmental concerns. Both electromigration (EM) and thermomigration (TM) have serious reliability issues for fine-pitch Pb-free solder bumps in the flip-chip technology used in consumer electronic products. We review the unique features of EM and TM in flip-chip solder bumps, emphasizing the effects of current crowding and joule heating. In addition, the challenges to a better understanding of EM and TM in Pb-free solders are discussed. For example, the anisotropic nature of Sn microstructure in Pb-free solders can enhance the dissolution rates of Ni and Cu in solders driven by EM and TM.
引用
收藏
页码:531 / 555
页数:25
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