High electric current density-induced interfacial reactions in micro ball grid array (μBGA) solder joints

被引:64
作者
Alam, MO
Wu, BY
Chan, YC
Tu, KN
机构
[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
Joule heating; heat dissipation; electromigration; solder joint; BGA;
D O I
10.1016/j.actamat.2005.09.031
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of a high electric current density on the interfacial reactions of micro ball grid array solder joints was studied at room temperature and at 150 degrees C. Four types of phenomena were reported. Along with electromigration-induced interfacial intermetallic compound (IMC) formation, dissolution at the Cu under bump metallization (UBM)/bond pad was also noticed. With a detailed investigation, it was found that the narrow and thin metallization at the component side produced '' Joule heating '' due to its higher resistance, which in turn was responsible for the rapid dissolution of the Cu UBM/bond pad near to the Cu trace. During an "electromigration test" of a solder joint, the heat generation due to Joule heating and the heat dissipation from the package should be considered carefully. When the heat dissipation fails to compete with the Joule heating, the solder joint melts and molten solder accelerates the interfacial reactions in the solder joint. The presence of a liquid phase was demonstrated from microstructural evidence of solder joints after different current stressing (ranging from 0.3 to 2 A) as well as an in situ observation. Electromigration-induced liquid state diffusion of Cu was found to be responsible for the higher growth rate of the IMC on the anode side. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:613 / 621
页数:9
相关论文
共 26 条
[1]   Effect of reaction time and P content on mechanical strength of the interface formed between eutectic Sn-Ag solder and Au/electroless Ni(P)/Cu bond pad [J].
Alam, MO ;
Chan, YC ;
Tu, KN .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) :4108-4115
[2]   Interfacial reaction of Pb-Sn solder and Sn-Ag solder with electroless Ni deposit during reflow [J].
Alam, MO ;
Chan, YC ;
Hung, KC .
JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (10) :1117-1121
[3]   Reliability study of the electroless Ni-P layer against solder alloy [J].
Alam, MO ;
Chan, YC ;
Hung, KC .
MICROELECTRONICS RELIABILITY, 2002, 42 (07) :1065-1073
[4]   Electromigration effects in Al-Au multilayers [J].
Bertolino, N ;
Garay, J ;
Anselmi-Tamburini, U ;
Munir, ZA .
SCRIPTA MATERIALIA, 2001, 44 (05) :737-742
[5]   Electromigration effects upon the low-temperature Sn/Ni interfacial reactions [J].
Chen, CM ;
Chen, SW .
JOURNAL OF MATERIALS RESEARCH, 2003, 18 (06) :1293-1296
[6]   Electromigration effect upon the Sn/Ag and Sn/Ni interfacial reactions at various temperatures [J].
Chen, CM ;
Chen, SW .
ACTA MATERIALIA, 2002, 50 (09) :2461-2469
[7]   Electromigration effect upon the Sn-0.7 wt% Cu/Ni and Sn-3.5 wt% Ag/Ni interfacial reactions [J].
Chen, CM ;
Chen, SW .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) :1208-1214
[8]   Electric current effects on Sn/Ag interfacial reactions [J].
Chen, CM ;
Chen, SW .
JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (07) :902-906
[9]   Electromigration effect upon the Zn/Ni and Bi/Ni interfacial reactions [J].
Chen, CM ;
Chen, SW .
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (10) :1222-1228
[10]   Electric current effects upon the Sn/Cu and Sn/Ni interfacial reactions [J].
Chen, SW ;
Chen, CM ;
Liu, WC .
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (11) :1193-1198