Effect of dye doping on the charge carrier balance in PPV light emitting diodes as measured by admittance spectroscopy

被引:38
作者
Hulea, IN
van der Scheer, RFJ
Brom, HB
Langeveld-Voss, BMW
van Dijken, A
Brunner, K
机构
[1] Leiden Univ, Kamerlingh Onnes Lab, NL-2300 RA Leiden, Netherlands
[2] TNO Ind Technol, NL-5600 HE Eindhoven, Netherlands
[3] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[4] Dutch Polymer Inst, Eindhoven, Netherlands
[5] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands
关键词
D O I
10.1063/1.1600850
中图分类号
O59 [应用物理学];
学科分类号
摘要
Dye doping is a promising way to increase the spectral purity of polymer light-emitting diodes (LEDs). Here we analyze the frequency and field dependence of the complex admittance of Al-Ba-PPV-poly(3,4-ethylenedioxythiophene:polystyrene sulphonic acid)-indium tin oxide LEDs with and without dye. We compare the charge carrier mobilities of pristine and dye-doped double-carrier and hole-only (Au replacing Al-Ba) devices. Dye doping is shown to significantly influence the electron mobilities while the hole mobilities are left unchanged and thereby changing the carrier balance in a double carrier device towards that of a hole only device. The minimum in the LED capacitance as a function of voltage appears to be an excellent probe for the electron trapping phenomenon underlying the reduction of the mobility. (C) 2003 American Institute of Physics.
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页码:1246 / 1248
页数:3
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