NEGATIVE CAPACITANCE AT METAL-SEMICONDUCTOR INTERFACES

被引：164

作者：

WU, X

YANG, ES

EVANS, HL

机构：

[1] Columbia University, New York

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 06期

关键词：

D O I：

10.1063/1.346442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A negative capacitance effect has been observed in metal-semiconductor contacts. This phenomenon is explained by considering the loss of interface charge at occupied states below Fermi level due to impact ionization. A modified Shockley-Read treatment is proposed to interpret the experimental observations. In particular, a two-energy-level simplified model is presented to simulate the capacitance spectrum. The results are in good agreement with the experimental data.

引用

页码：2845 / 2848

页数：4

共 15 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[2] THEORY OF ELECTRON-IMPACT IONIZATION INCLUDING A POTENTIAL STEP - APPLICATION TO GAAS-ALGAAS
BRENNAN, K
WANG, T
HESS, K
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 199 - 201
[3] THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GALLIUM-ARSENIDE USING AVALANCHE NOISE AND PHOTOCURRENT MULTIPLICATION MEASUREMENTS
BULMAN, GE
ROBBINS, VM
STILLMAN, GE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2454 - 2466
[4] ACCURATE PHASE CAPACITANCE SPECTROSCOPY OF TRANSITION-METAL SILICON DIODES
EVANS, HL
WU, X
YANG, ES
HO, PS
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 486 - 488
[5] MINORITY-CARRIER EFFECTS UPON SMALL-SIGNAL AND STEADY-STATE PROPERTIES OF SCHOTTKY DIODES
GREEN, MA
SHEWCHUN, J
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1141 - 1150
[6] ELECTRONIC STATES AT SILICIDE-SILICON INTERFACES
HO, PS
YANG, ES
EVANS, HL
WU, X
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (02) : 177 - 180
[7] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111)
LIEHR, M
SCHMID, PE
LEGOUES, FK
HO, PS
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (19) : 2139 - 2142
[8] METAL-DERIVED BAND-GAP STATES - TI ON GAAS(110)
LUDEKE, R
STRAUB, D
HIMPSEL, FJ
LANDGREN, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 874 - 878
[9] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

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