Site-selective reaction of Br2 with second layer Ga atoms on the As-rich GaAs(001)-2 x 4 surface

被引：24

作者：

Liu, Y ^{[1
]}

Komrowski, AJ ^{[1
]}

Kummel, AC ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Chem, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.81.413

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The top layer of the GaAs(001)-(2 X 4) surface consists of rows of As-As dimers. However, our scanning tunneling microscopy study shows that, in the initial adsorption stage, monoenergetic Br-2 molecules (0.89 eV) react exclusively with the second layer Ga atoms exposed in trenches or at defects on the surface. A simple molecular orbital argument was used to explain the dynamics of forming gallium bromide species at various surface Ga sites.

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页码：413 / 416

页数：4

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