Electrical properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for nondestructive readout memory

被引：21

作者：

Shin, DS

Lee, HN

Kim, YT ^{[1
]}

Choi, IH

Kim, BH

机构：

[1] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul 136791, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 08期

关键词：

ferroelectric; MFIS; memory window; SrBi2Ta2O9; CeO2; coercive field;

D O I：

10.1143/JJAP.37.4373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Memory window and leakage current density of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure have been investigated for non destructive read out memory. Coercive field that decisively affects on the memory window becomes greater by the interposition of the CeO2 insulator between SrBi2Ta2O9 and SiO2 and thus the memory window also increases with an electric field to the SrBi2Ta2O9. A typical value of memory window for PT/SrBi2Ta2O9 (140 nm)/CeO2/SiO2/Si is in the range of 0.5 - 3.0 V, which is high enough for the non destructive read out memory, at the applied voltage of 3 - 9 V. The leakage current density is remained at 3 x 10(-8) A/cm(2) until the applied voltage increases up to 10 V.

引用

页码：4373 / 4376

页数：4

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